Invention Grant
- Patent Title: Piezoelectric element
- Patent Title (中): 压电元件
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Application No.: US12073238Application Date: 2008-03-03
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Publication No.: US07901800B2Publication Date: 2011-03-08
- Inventor: Kenji Shibata , Fumihito Oka
- Applicant: Kenji Shibata , Fumihito Oka
- Applicant Address: JP Tokyo
- Assignee: Hitachi Cable, Ltd.
- Current Assignee: Hitachi Cable, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2007-241207 20070918
- Main IPC: B32B9/00
- IPC: B32B9/00 ; B32B19/00 ; G11B11/105 ; G11B5/64 ; H01L41/00 ; H02N2/00
Abstract:
A piezoelectric film formed above a Si substrate. The piezoelectric film is formed of a potassium sodium niobate expressed by a general formula (K,Na)NbO3 with perovskite structure. A film thickness of the piezoelectric film is within a range from 0.3 μm to 10 μm. An intermediate film is formed between the Si substrate and the piezoelectric film. The intermediate film generates a stress in a compressive direction in the piezoelectric film.
Public/Granted literature
- US20090075066A1 Piezoelectric element Public/Granted day:2009-03-19
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