Invention Grant
US07901842B2 Photomask blank and method of producing the same, method of producing photomask, and method of producing semiconductor device
有权
光掩模坯料及其制造方法，制造光掩模的方法以及半导体装置的制造方法
- Patent Title: Photomask blank and method of producing the same, method of producing photomask, and method of producing semiconductor device
- Patent Title (中): 光掩模坯料及其制造方法，制造光掩模的方法以及半导体装置的制造方法
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Application No.: US12088408Application Date: 2006-09-29
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Publication No.: US07901842B2Publication Date: 2011-03-08
- Inventor: Takeyuki Yamada , Yasushi Okubo , Masao Ushida , Hiroyuki Iwashita
- Applicant: Takeyuki Yamada , Yasushi Okubo , Masao Ushida , Hiroyuki Iwashita
- Applicant Address: JP Tokyo
- Assignee: Hoya Corporation
- Current Assignee: Hoya Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2005-286236 20050930
- International Application: PCT/JP2006/319491 WO 20060929
- International Announcement: WO2007/037383 WO 20070405
- Main IPC: G03F1/00
- IPC: G03F1/00
Abstract:
It is provided a photomask blank that has good flatness when a light-shielding film is patterned and hence can provide a good mask pattern accuracy and a good pattern transfer accuracy, and a method of producing a photomask.A photomask blank of the present invention includes a light-shielding film containing at least chromium on a light-transmitting substrate. The light-shielding film is formed so as to cause a desired film stress in the direction opposite to that of a change in the film stress that is anticipated to be caused in the light-shielding film by heat treatment according to a resist film formed on the light-shielding film. A photomask is produced by patterning the light-shielding film of the photomask blank by dry etching.
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