Invention Grant
- Patent Title: Method with correction of hard mask pattern critical dimension for fabricating photomask
- Patent Title (中): 用于制造光掩模的硬掩模图案临界尺寸校正方法
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Application No.: US12164841Application Date: 2008-06-30
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Publication No.: US07901844B2Publication Date: 2011-03-08
- Inventor: Tae Joong Ha
- Applicant: Tae Joong Ha
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2007-0094655 20070918
- Main IPC: G03F1/08
- IPC: G03F1/08 ; G03F1/14

Abstract:
A method for fabricating a photomask includes forming a light blocking layer, a hard mask layer, and a resist layer on a transparent substrate, forming a resist pattern to selectively expose the hard mask layer by removing the resist layer selectively, forming a hard mask pattern by etching the exposed hard mask layer using the resist pattern as an etch mask, exposing the hard mask pattern by removing the resist pattern; measuring a critical dimension of the exposed hard mask pattern, correcting the measured critical dimension of the hard mask pattern to correspond to a critical dimension of a target pattern, forming a light blocking pattern by etching the exposed light blocking layer using the corrected hard mask pattern as an etch mask, and removing the hard mask pattern.
Public/Granted literature
- US20090075181A1 Method for Fabricating Photomask Public/Granted day:2009-03-19
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