Invention Grant
- Patent Title: Photomask and method of fabricating the same
- Patent Title (中): 光掩模及其制造方法
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Application No.: US12346973Application Date: 2008-12-31
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Publication No.: US07901849B2Publication Date: 2011-03-08
- Inventor: Tae Joong Ha
- Applicant: Tae Joong Ha
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2008-0032288 20080407
- Main IPC: G03F1/00
- IPC: G03F1/00

Abstract:
A photomask comprises: a light transmitting substrate; patterns disposed over the light transmitting substrate to define a light transmitting region; and a light transmittance control layer disposed between the light transmitting substrate and the patterns having a relatively high light transmittance in a first control layer region overlapping a first portion of the light transmitting region adjacent to a poor pattern having a size larger than a normal size than in a second control layer region overlapping a second portion of the light transmitting region between normal patterns having a normal size.
Public/Granted literature
- US20090253052A1 Photomask and Method of Fabricating the Same Public/Granted day:2009-10-08
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