Invention Grant
- Patent Title: Metrology of bilayer photoresist processes
- Patent Title (中): 双层光刻胶工艺的计量
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Application No.: US12074148Application Date: 2008-02-29
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Publication No.: US07901852B2Publication Date: 2011-03-08
- Inventor: Cesar M. Garza , Sungseo Cho
- Applicant: Cesar M. Garza , Sungseo Cho
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Fortkort & Houston P.C.
- Agent John A. Fortkort
- Main IPC: G03F9/00
- IPC: G03F9/00 ; G03C5/00 ; G06K9/00
Abstract:
A method for patterning a substrate is provided, which comprises (a) providing a substrate; (b) applying a first layer comprising a first photo resist to the substrate; (c) applying a second layer comprising a second photo resist over the first layer; (d) patterning the second layer; and (e) inspecting the patterned second layer with an inspection tool; wherein at least one of the first and second layers comprises a contrasting agent which increases the contrast between the first and second layers to the inspection tool.
Public/Granted literature
- US20090220895A1 Metrology of bilayer photoresist processes Public/Granted day:2009-09-03
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