Invention Grant
- Patent Title: Photoresist topcoat for a photolithographic process
- Patent Title (中): 光刻面漆，用于光刻工艺
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Application No.: US12128171Application Date: 2008-05-28
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Publication No.: US07901868B2Publication Date: 2011-03-08
- Inventor: Robert David Allen , Rutnam Sooriyakumaran , Linda Karin Sundberg
- Applicant: Robert David Allen , Rutnam Sooriyakumaran , Linda Karin Sundberg
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Main IPC: G03F7/09
- IPC: G03F7/09 ; G03F7/11 ; G03C1/76 ; C08G77/38
Abstract:
A composition that includes functionalized polyhedral oligomeric silsesquioxanes derivatives of the formulas TmR3 where m is equal to 8, 10 or 12 and QnMnR1,R2,R3 where n is equal to 8, 10 or 12 are provided. The functional groups include aqueous base soluble moieties. Mixtures of the functionalized polyhedral oligomeric silsesquioxanes derivatives are highly suitable as a topcoat for photoresist in photolithography and immersion photolithography applications.
Public/Granted literature
- US20080227028A1 PHOTORESIST TOPCOAT FOR A PHOTOLITHOGRAPHIC PROCESS Public/Granted day:2008-09-18
Information query
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