Invention Grant
- Patent Title: Double patterning with a double layer cap on carbonaceous hardmask
- Patent Title (中): 在碳质硬掩模上双层图案化
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Application No.: US11873648Application Date: 2007-10-17
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Publication No.: US07901869B2Publication Date: 2011-03-08
- Inventor: Christopher D. Bencher , Huixiong Dai
- Applicant: Christopher D. Bencher , Huixiong Dai
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman, LLP
- Main IPC: G03F7/26
- IPC: G03F7/26 ; C23C16/00

Abstract:
Methods to etch features in a substrate with a multi-layered double patterning mask. The multi-layered double patterning mask includes a carbonaceous mask layer, a first cap layer on the carbonaceous mask layer and a second cap layer on the first cap layer. After forming the multi-layered mask, a first lithographically defined pattern is etched into the second cap layer. A double pattern that is a composition of the first lithographically defined pattern etched in the second cap layer and a second lithographically defined pattern is then etched into the first cap layer and the carbonaceous mask layer. The double pattern formed in the carbonaceous mask layer is then transferred to a substrate layer and any portion of the multi-layered mask remaining is then removed.
Public/Granted literature
- US20080299494A1 DOUBLE PATTERNING WITH A DOUBLE LAYER CAP ON CARBONACEOUS HARDMASK Public/Granted day:2008-12-04
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