Invention Grant
- Patent Title: Method for detecting a void
- Patent Title (中): 检测空白的方法
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Application No.: US12240767Application Date: 2008-09-29
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Publication No.: US07901954B2Publication Date: 2011-03-08
- Inventor: Takayuki Enda
- Applicant: Takayuki Enda
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Priority: JP2007-254536 20070928
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/4763
Abstract:
Methods for detecting a void in an element portion of a semiconductor device having an element portion and a void detection structure are disclosed. As a part of the method, an insulating film is formed on a substrate, a plurality of holes is formed in the insulating film, and a metal portion is formed on the insulating film to fill the plurality of holes. The metal portion is polished until the insulating film is exposed and a recessed portion is formed in the void detection structure. It is determined if a void exists in the element portion of the semiconductor device by determining whether or not a void is exposed at a surface of the recessed portion of the void detection structure.
Public/Granted literature
- US20090250697A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR Public/Granted day:2009-10-08
Information query
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