Invention Grant
- Patent Title: Method of constructing a stacked-die semiconductor structure
- Patent Title (中): 堆叠型半导体结构的构成方法
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Application No.: US11821653Application Date: 2007-06-25
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Publication No.: US07901955B2Publication Date: 2011-03-08
- Inventor: Melissa Grupen-Shemansky
- Applicant: Melissa Grupen-Shemansky
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Main IPC: H01L21/66
- IPC: H01L21/66

Abstract:
In constructing a multi-die semiconductor device, a plurality of semiconductor die are provided. Each die is probe tested when it is part of a wafer. Flat contacts are connected to each die when it is part of a wafer. After wafer sawing, each die is tested in a test socket, using the contacts connected thereto. The die are then packaged in stacked relation to form the multi-die semiconductor device.
Public/Granted literature
- US20080318348A1 Method of constructing a stacked-die semiconductor structure Public/Granted day:2008-12-25
Information query
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