Invention Grant
US07901955B2 Method of constructing a stacked-die semiconductor structure 有权
堆叠型半导体结构的构成方法

  • Patent Title: Method of constructing a stacked-die semiconductor structure
  • Patent Title (中): 堆叠型半导体结构的构成方法
  • Application No.: US11821653
    Application Date: 2007-06-25
  • Publication No.: US07901955B2
    Publication Date: 2011-03-08
  • Inventor: Melissa Grupen-Shemansky
  • Applicant: Melissa Grupen-Shemansky
  • Applicant Address: US CA Sunnyvale
  • Assignee: Spansion LLC
  • Current Assignee: Spansion LLC
  • Current Assignee Address: US CA Sunnyvale
  • Main IPC: H01L21/66
  • IPC: H01L21/66
Method of constructing a stacked-die semiconductor structure
Abstract:
In constructing a multi-die semiconductor device, a plurality of semiconductor die are provided. Each die is probe tested when it is part of a wafer. Flat contacts are connected to each die when it is part of a wafer. After wafer sawing, each die is tested in a test socket, using the contacts connected thereto. The die are then packaged in stacked relation to form the multi-die semiconductor device.
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