Invention Grant
- Patent Title: Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device
- Patent Title (中): III族氮化物衬底，提供外延层的衬底，其制造方法以及制造半导体器件的方法
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Application No.: US12445681Application Date: 2007-10-09
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Publication No.: US07901960B2Publication Date: 2011-03-08
- Inventor: Keiji Ishibashi , Akihiro Hachigo , Masato Irikura , Seiji Nakahata
- Applicant: Keiji Ishibashi , Akihiro Hachigo , Masato Irikura , Seiji Nakahata
- Applicant Address: JP Osaka
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2006-284488 20061019
- International Application: PCT/JP2007/069661 WO 20071009
- International Announcement: WO2008/047627 WO 20080424
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface is not more than 3×1013; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface is not more than 3×1013, and a haze level of the surface is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid, material per square centimeter of a surface is not more than 2×1014, and a haze level of the surface is not more than 5 ppm.
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