Invention Grant
US07901973B2 Solid state imaging device and manufacturing method thereof 有权
固态成像装置及其制造方法

  • Patent Title: Solid state imaging device and manufacturing method thereof
  • Patent Title (中): 固态成像装置及其制造方法
  • Application No.: US12096005
    Application Date: 2006-12-11
  • Publication No.: US07901973B2
    Publication Date: 2011-03-08
  • Inventor: Kiyofumi Yamamoto
  • Applicant: Kiyofumi Yamamoto
  • Applicant Address: JP Tokyo
  • Assignee: Fujifilm Corporation
  • Current Assignee: Fujifilm Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Birch, Stewart, Kolasch & Birch, LLP
  • Priority: JP2005-360949 20051214; JP2005-362325 20051215
  • International Application: PCT/JP2006/325130 WO 20061211
  • International Announcement: WO2007/069750 WO 20070621
  • Main IPC: H01L21/78
  • IPC: H01L21/78
Solid state imaging device and manufacturing method thereof
Abstract:
To a transparent substrate (20) on which a plurality of spacers (5) are formed, an infrared cut filter (IRCF) substrate (27) is attached. The IRCF substrate (27) has a coefficient of thermal expansion smaller than the transparent substrate (20) and approximately equal to a wafer (31). Next, the transparent substrate (20) is diced into plural pieces to form a plurality of cover glasses (6). Then heat cure adhesive (32) is coated on each spacer (5) and the spacers (5) are attached on the wafer (31) on which a plurality of light receiving section (3) and pads (10) are previously formed. Finally, the heat cure adhesive (32) is heated to be cured.
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