Invention Grant
US07901974B2 Masked laser anneal during fabrication of backside illuminated image sensors
有权
在制造背面照明图像传感器期间的掩模激光退火
- Patent Title: Masked laser anneal during fabrication of backside illuminated image sensors
- Patent Title (中): 在制造背面照明图像传感器期间的掩模激光退火
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Application No.: US12178552Application Date: 2008-07-23
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Publication No.: US07901974B2Publication Date: 2011-03-08
- Inventor: Vincent Venezia , Hsin-Chih Tai , Duli Mao , Yin Qian
- Applicant: Vincent Venezia , Hsin-Chih Tai , Duli Mao , Yin Qian
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A technique for fabricating an array of imaging pixels includes fabricating front side components on a front side of the array. After fabricating the front side components, a dopant layer is implanted on a backside of the array. A mask is formed over the dopant layer to selectively expose portions of the dopant layer. Next, the exposed portions of the dopant layer are laser annealed. Alternatively, the mask may be disposed over the backside prior to the formation of the dopant layer and the dopants implanted through the exposed portions and subsequently laser annealed.
Public/Granted literature
- US20090200587A1 Masked laser anneal during fabrication of backside illuminated image sensors Public/Granted day:2009-08-13
Information query
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