Invention Grant
- Patent Title: Method of forming a small contact in phase-change memory
- Patent Title (中): 在相变存储器中形成小触点的方法
-
Application No.: US12366595Application Date: 2009-02-05
-
Publication No.: US07901979B2Publication Date: 2011-03-08
- Inventor: Hsiang-Lan Lung
- Applicant: Hsiang-Lan Lung
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Stout, Uxa, Buyan & Mullins, LLP
- Main IPC: H01L21/06
- IPC: H01L21/06
Abstract:
A method of fabricating a phase-change memory cell is described. The cross-sectional area of a contact with a phase-change memory element within the cell is controlled by a width and an exposed length of a bottom electrode. The method allows the formation of very small phase-change memory cells.
Public/Granted literature
- US20090166603A1 METHOD OF FORMING A SMALL CONTACT IN PHASE-CHANGE MEMORY Public/Granted day:2009-07-02
Information query
IPC分类:
