Invention Grant
US07901994B2 Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers
有权
制造具有氮化硅层的III族氮化物半导体器件的方法
- Patent Title: Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers
- Patent Title (中): 制造具有氮化硅层的III族氮化物半导体器件的方法
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Application No.: US11286805Application Date: 2005-11-23
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Publication No.: US07901994B2Publication Date: 2011-03-08
- Inventor: Adam William Saxler , Scott T. Sheppard
- Applicant: Adam William Saxler , Scott T. Sheppard
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & Sajoec
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Methods of fabricating transistor in which a first Group III nitride layer is formed on a substrate in a reactor, and a second Group III nitride layer is formed on the first Group III nitride layer. An insulating layer such as, for example, a silicon nitride layer is formed on the second Group III nitride layer in-situ in the reactor. The substrate including the first Group III nitride layer, the second group III nitride layer and the silicon nitride layer is removed from the reactor, and the silicon nitride layer is patterned to form a first contact hole that exposes a first contact region of the second Group III nitride layer. A metal contact is formed on the first contact region of the second Group III nitride layer.
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