Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12021664Application Date: 2008-01-29
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Publication No.: US07901997B2Publication Date: 2011-03-08
- Inventor: Takashi Ozawa , Seiji Sato , Masao Nakazawa , Mitsuyoshi Imai , Masatoshi Nakamura , Kei Imafuji
- Applicant: Takashi Ozawa , Seiji Sato , Masao Nakazawa , Mitsuyoshi Imai , Masatoshi Nakamura , Kei Imafuji
- Applicant Address: JP Nagano-shi
- Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee Address: JP Nagano-shi
- Agency: Rankin, Hill & Clark LLP
- Priority: JP2007-025861 20070205
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A solder 14 is formed, by a plating method, on a connecting surface 21A and a side surface 21B in a connecting pad 21 of a wiring board 11 which is opposed to a metal bump 13 formed on an electrode pad 31 of a semiconductor chip 12, and subsequently, the solder 14 is molten to form an accumulated solder 15 taking a convex shape on the connecting surface 21A of the connecting pad 21 and the metal bump 13 is then mounted on the connecting surface 21A of the connecting pad 21 on which the accumulated solder is formed, and the accumulated solder 15 and the metal bump 13 are thus bonded to each other.
Public/Granted literature
- US20080188040A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2008-08-07
Information query
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