Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11631545Application Date: 2005-07-25
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Publication No.: US07902002B2Publication Date: 2011-03-08
- Inventor: Shunpei Yamazaki , Koichiro Tanaka
- Applicant: Shunpei Yamazaki , Koichiro Tanaka
- Applicant Address: JP Kanagawa-Ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-Ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2004-224281 20040730
- International Application: PCT/JP2005/013985 WO 20050725
- International Announcement: WO2006/027912 WO 20060316
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84

Abstract:
When a semi-conductor film is irradiated with conventional pulsed laser light, unevenness, which is called as ridge, is caused on the surface of the semiconductor film. In the case of a top-gate type TFT, element characteristics are changed depending on the ridge. In particular, there is a problem in that variation in the plural thin film transistors electrically connected in parallel with one another. According to the present invention, in manufacturing a circuit including plural thin film transistors, the width LP of a region (not including a microcrystal region) that is melted by irradiating a semiconductor film with light of a continuous wave laser is enlarged, and active layers of a plurality of thin film transistors (that are electrically connected in parallel with one another) are arranged in one region.
Public/Granted literature
- US20080135848A1 Semiconductor Device Public/Granted day:2008-06-12
Information query
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