Method for fabricating a fin-shaped semiconductor structure and a fin-shaped semiconductor structure

Invention Grant

US07902005B2 Method for fabricating a fin-shaped semiconductor structure and a fin-shaped semiconductor structure 有权

Title translation: 用于制造鳍状半导体结构和鳍状半导体结构的方法

Please log in to see more content

Patent Title: Method for fabricating a fin-shaped semiconductor structure and a fin-shaped semiconductor structure
Patent Title (中): 用于制造鳍状半导体结构和鳍状半导体结构的方法
Application No.: US11934665

Application Date: 2007-11-02
Publication No.: US07902005B2

Publication Date: 2011-03-08
Inventor: Chris Stapelmann , Thomas Schulz
Applicant: Chris Stapelmann , Thomas Schulz
Applicant Address: DE Neubiberg
Assignee: Infineon Technologies AG
Current Assignee: Infineon Technologies AG
Current Assignee Address: DE Neubiberg
Agency: Slater & Matsil, L.L.P.
Main IPC: H01L21/00
IPC: H01L21/00

Method for fabricating a fin-shaped semiconductor structure and a fin-shaped semiconductor structure

Abstract:

A fin-shaped structure is formed from a semiconductor material. The fin-shaped structure is processed to generate a tensile strain within the semiconductor material along a longitudinal direction of the fin.

Abstract(Chinese):

鳍状结构由半导体材料形成。处理鳍状结构以沿着翅片的纵向方向在半导体材料内产生拉伸应变。

Public/Granted literature

US20090114955A1 Method for Fabricating a Fin-Shaped Semiconductor Structure and a Fin-Shaped Semiconductor Structure Public/Granted day:2009-05-07

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备