Invention Grant
- Patent Title: Method of manufacturing a thin film transistor array substrate
- Patent Title (中): 制造薄膜晶体管阵列基板的方法
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Application No.: US12436356Application Date: 2009-05-06
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Publication No.: US07902006B2Publication Date: 2011-03-08
- Inventor: Woong-Kwon Kim , Ho-Jun Lee , Hong-Kee Chin , Sang-Heon Song , Jung-Suk Bang , Jun-Ho Song , Byeong-Jae Ahn , Bae-Heuk Yim
- Applicant: Woong-Kwon Kim , Ho-Jun Lee , Hong-Kee Chin , Sang-Heon Song , Jung-Suk Bang , Jun-Ho Song , Byeong-Jae Ahn , Bae-Heuk Yim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2008-0132431 20081223
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84 ; G02F1/1343 ; G02F1/1333

Abstract:
In manufacturing a thin film transistor array substrate, a passivation film is formed over the transistors. A first photoresist pattern is formed over the passivation film, with a first portion partially overlying at least one source/drain electrode of each transistor and overlying each pixel electrode region, and with a second portion thicker than the first portion. The passivation film is patterned using the first photoresist pattern as a mask. The first photoresist pattern's first portion is removed to form a second photoresist pattern which protrudes upward around the pixel electrode regions. A transparent conductive film is formed with recesses in the pixel electrode regions. A masking pattern is formed over the transparent film in each pixel electrode region, the masking pattern's top surface being below a top of the transparent film. The transparent film is patterned using the masking pattern as a mask to form the pixel electrodes.
Public/Granted literature
- US20100159652A1 METHOD OF MANUFACTURING A THIN FILM TRANSISTOR ARRAY SUBSTRATE Public/Granted day:2010-06-24
Information query
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