Graded high germanium compound films for strained semiconductor devices

Invention Grant

US07902009B2 Graded high germanium compound films for strained semiconductor devices 有权

Title translation: 用于应变半导体器件的分级高锗化合物膜

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Patent Title: Graded high germanium compound films for strained semiconductor devices
Patent Title (中): 用于应变半导体器件的分级高锗化合物膜
Application No.: US12316510

Application Date: 2008-12-11
Publication No.: US07902009B2

Publication Date: 2011-03-08
Inventor: Danielle Simonelli , Anand Murthy
Applicant: Danielle Simonelli , Anand Murthy
Applicant Address: US CA Santa Clara
Assignee: Intel Corporation
Current Assignee: Intel Corporation
Current Assignee Address: US CA Santa Clara
Agent Scott M. Lane
Main IPC: H01L21/00
IPC: H01L21/00

Graded high germanium compound films for strained semiconductor devices

Abstract:

Embodiments of an apparatus and methods for providing a graded high germanium compound region are generally described herein. Other embodiments may be described and claimed.

Abstract(Chinese):

本文通常描述用于提供渐变的高锗化合物区域的装置和方法的实施例。可以描述和要求保护其他实施例。

Public/Granted literature

US20100148217A1 Graded high germanium compound films for strained semiconductor devices Public/Granted day:2010-06-17

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备