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US07902010B2 Mask for sequential lateral solidification (SLS) process and a method for crystallizing amorphous silicon by using the same 有权
用于顺序侧向固化（SLS）工艺的掩模和通过使用其来结晶非晶硅的方法

  • Patent Title: Mask for sequential lateral solidification (SLS) process and a method for crystallizing amorphous silicon by using the same
  • Patent Title (中): 用于顺序侧向固化（SLS）工艺的掩模和通过使用其来结晶非晶硅的方法
  • Application No.: US12777808
    Application Date: 2010-05-11
  • Publication No.: US07902010B2
    Publication Date: 2011-03-08
  • Inventor: Ming-Wei Sun
  • Applicant: Ming-Wei Sun
  • Applicant Address: TW Hsinchu
  • Assignee: AU Optronics Corp.
  • Current Assignee: AU Optronics Corp.
  • Current Assignee Address: TW Hsinchu
  • Agency: Birch, Stewart, Kolasch & Birch, LLP
  • Priority: TW94124035A 20050715
  • Main IPC: H01L21/84
  • IPC: H01L21/84
Mask for sequential lateral solidification (SLS) process and a method for crystallizing amorphous silicon by using the same
Abstract:
A mask for sequential lateral solidification (SLS) processes including at least one first window, one second window, one third window, and one fourth window is provided. Each window has a length extending longitude on the mask. The second window is aligned to the first window. The width of the first window is greater than that of the second window. The fourth window is aligned to the third window. The width of the third window is greater than that of the fourth window.
Abstract(Chinese):

提供了包括至少一个第一窗口，一个第二窗口，一个第三窗口和一个第四窗口的顺序侧向固化（SLS）处理的掩模。 每个窗口的长度在面罩上经度延长。 第二个窗口与第一个窗口对齐。 第一个窗口的宽度大于第二个窗口的宽度。 第四个窗口与第三个窗口对齐。 第三窗口的宽度大于第四窗口的宽度。

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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70 .由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77 ..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78 ...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82 ....制造器件，例如每一个由许多元件组成的集成电路
H01L21/84 .....衬底不是半导体的，例如绝缘体
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