Invention Grant
US07902012B2 High speed lateral heterojunction MISFETs realized by 2-dimensional bandgap engineering and methods thereof
有权
通过二维带隙工程实现的高速横向异质结MISFET及其方法
- Patent Title: High speed lateral heterojunction MISFETs realized by 2-dimensional bandgap engineering and methods thereof
- Patent Title (中): 通过二维带隙工程实现的高速横向异质结MISFET及其方法
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Application No.: US12534562Application Date: 2009-08-03
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Publication No.: US07902012B2Publication Date: 2011-03-08
- Inventor: Qiqing Christine Ouyang , Jack Oon Chu
- Applicant: Qiqing Christine Ouyang , Jack Oon Chu
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: H01L21/8234
- IPC: H01L21/8234

Abstract:
A method for forming and the structure of a strained lateral channel of a field effect transistor, a field effect transistor and CMOS circuitry is described incorporating a drain, body and source region on a single crystal semiconductor substrate wherein a hetero-junction is formed between the source and body of the transistor, wherein the source region and channel are independently lattice strained with respect the body region. The invention reduces the problem of leakage current from the source region via the hetero junction and lattice strain while independently permitting lattice strain in the channel region for increased mobility via choice of the semiconductor materials and alloy composition.
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