Invention Grant
US07902034B2 Method of manufacturing SOI substrate and method of manufacturing semiconductor device
有权
制造SOI衬底的方法和制造半导体器件的方法
- Patent Title: Method of manufacturing SOI substrate and method of manufacturing semiconductor device
- Patent Title (中): 制造SOI衬底的方法和制造半导体器件的方法
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Application No.: US12076691Application Date: 2008-03-21
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Publication No.: US07902034B2Publication Date: 2011-03-08
- Inventor: Shunpei Yamazaki , Hideto Ohnuma
- Applicant: Shunpei Yamazaki , Hideto Ohnuma
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2007-115993 20070425
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A first substrate of single-crystal silicon within which is formed an embrittled layer and over a surface of which is formed a first insulating film is provided; a second insulating film is formed over a surface of a second substrate; at least one surface of either the first insulating film or the second insulating film is exposed to a plasma atmosphere or an ion atmosphere, and that surface of the first insulating film or the second insulating film is activated; the first substrate and the second substrate are bonded together with the first insulating film and the second insulating film interposed therebetween; a single-crystal silicon film is separated from the first substrate at an interface of the embrittled layer of the first substrate, and a thin film single-crystal silicon film is formed over the second substrate with the first insulating film and the second insulating film interposed therebetween.
Public/Granted literature
- US20080268583A1 Method of manufacturing SOI substrate and method of manufacturing semiconductor device Public/Granted day:2008-10-30
Information query
IPC分类:
