Invention Grant
- Patent Title: Method for manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12546719Application Date: 2009-08-25
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Publication No.: US07902041B2Publication Date: 2011-03-08
- Inventor: Shunpei Yamazaki , Hideto Ohnuma
- Applicant: Shunpei Yamazaki , Hideto Ohnuma
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2007-127270 20070511
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84 ; H01L21/30 ; H01L21/46 ; H01L21/04
Abstract:
An object is to provide a method for manufacturing, with high yield, a semiconductor device having a crystalline semiconductor layer even if a substrate with low upper temperature limit. A groove is formed in a part of a semiconductor substrate to form a semiconductor substrate that has a projecting portion, and a bonding layer is formed to cover the projecting portion. In addition, before the bonding layer is formed, a portion of the semiconductor substrate to be the projecting portion is irradiated with accelerated ions to form a brittle layer. After the bonding layer and the supporting substrate are bonded together, heat treatment for separation of the semiconductor substrate is performed to provide a semiconductor layer over the supporting substrate. The semiconductor layer is selectively etched, and a semiconductor element is formed and a semiconductor device is manufactured.
Public/Granted literature
- US20090309183A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2009-12-17
Information query
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