Invention Grant
US07902042B2 Method of manufacturing SOI wafer and thus-manufactured SOI wafer
有权
制造SOI晶片和如此制造的SOI晶片的方法
- Patent Title: Method of manufacturing SOI wafer and thus-manufactured SOI wafer
- Patent Title (中): 制造SOI晶片和如此制造的SOI晶片的方法
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Application No.: US11662285Application Date: 2005-09-09
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Publication No.: US07902042B2Publication Date: 2011-03-08
- Inventor: Hiroji Aga , Norihiro Kobayashi , Masayuki Imai , Tatsuo Enomoto , Hiroshi Takeno
- Applicant: Hiroji Aga , Norihiro Kobayashi , Masayuki Imai , Tatsuo Enomoto , Hiroshi Takeno
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Handotai Co., Ltd.
- Current Assignee: Shin-Etsu Handotai Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2004-265901 20040913; JP2004-268901 20040915
- International Application: PCT/JP2005/016582 WO 20050909
- International Announcement: WO2006/030699 WO 20060323
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46
Abstract:
A method of manufacturing an SOI wafer includes a bonding step, a thinning and a bonding annealing step. Assuming refractive index n1 of SiO2 as 1.5, refractive index n2 of Si as 3.5, and optical thickness tOP of the silicon oxide film 2 and the SOI layer 15 in the infrared wavelength region as tOP=n1×t1+n2×t2, the thickness t1 of the silicon oxide film 2 and thickness t2 of the SOI layer so as to satisfy a relation of 0.1λ
Public/Granted literature
- US20080128851A1 Method Of Manufacturing Soi Wafer And Thus-Manufactured Soi Wafer Public/Granted day:2008-06-05
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