Invention Grant
- Patent Title: Method of producing bonded wafer
- Patent Title (中): 生产接合晶片的方法
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Application No.: US11855959Application Date: 2007-09-14
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Publication No.: US07902043B2Publication Date: 2011-03-08
- Inventor: Nobuyuki Morimoto , Akihiko Endo
- Applicant: Nobuyuki Morimoto , Akihiko Endo
- Applicant Address: JP Tokyo
- Assignee: Sumco Corporation
- Current Assignee: Sumco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Kolisch Hartwell, P.C.
- Priority: JP2006-251252 20060915
- Main IPC: H01L21/30
- IPC: H01L21/30
Abstract:
A method of producing a bonded wafer, comprising: performing bonding of a first semiconductor wafer and a second semiconductor wafer without interposing an insulation film in between; and performing thinning of the second semiconductor wafer, wherein surface portions at least including bonded surfaces of the first semiconductor wafer and the second semiconductor wafer have an oxygen concentration of 1.0×1018 atoms/cm3 (Old ASTM) or less.
Public/Granted literature
- US20080070377A1 METHOD OF PRODUCING BONDED WAFER Public/Granted day:2008-03-20
Information query
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