Invention Grant
- Patent Title: Methods and apparatus for incorporating nitrogen in oxide films
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Application No.: US11446444Application Date: 2006-06-02
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Publication No.: US07902050B2Publication Date: 2011-03-08
- Inventor: Tatsuya Sato , Patricia M. Liu , Fanos Christodoulou
- Applicant: Tatsuya Sato , Patricia M. Liu , Fanos Christodoulou
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Dugan & Dugan, PC
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the process chamber. The process chamber is preconditioned using a plasma power that is at least 150% higher than a plasma power used during plasma nitridation of the substrate. Numerous other aspects are provided.
Public/Granted literature
- US20070111458A1 Methods and apparatus for incorporating nitrogen in oxide films Public/Granted day:2007-05-17
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