Invention Grant
US07902051B2 Method for fabrication of single crystal diodes for resistive memories
有权
用于制造用于电阻存储器的单晶二极管的方法
- Patent Title: Method for fabrication of single crystal diodes for resistive memories
- Patent Title (中): 用于制造用于电阻存储器的单晶二极管的方法
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Application No.: US11970100Application Date: 2008-01-07
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Publication No.: US07902051B2Publication Date: 2011-03-08
- Inventor: Bipin Rajendran , Thomas Happ , Hsiang-Lan Lung
- Applicant: Bipin Rajendran , Thomas Happ , Hsiang-Lan Lung
- Applicant Address: US NY Armonk DE Munich TW Hsinchu
- Assignee: International Business Machines Corporation,Qimonda AG,Macronix International Co., Ltd.
- Current Assignee: International Business Machines Corporation,Qimonda AG,Macronix International Co., Ltd.
- Current Assignee Address: US NY Armonk DE Munich TW Hsinchu
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36 ; H01L21/331 ; H01L21/00
Abstract:
The present invention, in one embodiment, provides a method of producing a PN junction the method including providing a single crystal substrate; forming an insulating layer on the single crystal substrate; forming a via through the insulating layer to provide an exposed portion of the single crystal substrate; forming amorphous Si on at least the exposed portion of the single crystal substrate; converting at least a portion of the amorphous Si into single crystal Si; and forming dopant regions in the single crystal Si. In one embodiment the diode of the present invention is integrated with a memory device.
Public/Granted literature
- US20090176354A1 METHOD FOR FABRICATION OF SINGLE CRYSTAL DIODES FOR RESISTIVE MEMORIES Public/Granted day:2009-07-09
Information query
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