Invention Grant
US07902064B1 Method of forming a layer to enhance ALD nucleation on a substrate
有权
形成层以增强基底上的ALD成核的方法
- Patent Title: Method of forming a layer to enhance ALD nucleation on a substrate
- Patent Title (中): 形成层以增强基底上的ALD成核的方法
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Application No.: US12121661Application Date: 2008-05-15
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Publication No.: US07902064B1Publication Date: 2011-03-08
- Inventor: Tony Chiang , Chi-I Lang , Zachary Fresco
- Applicant: Tony Chiang , Chi-I Lang , Zachary Fresco
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/4763
- IPC: H01L21/4763

Abstract:
A layer to enhance nucleation of a substrate is described, including a method to form the layer, the method including obtaining a substrate comprising a patterned feature comprising a dielectric region and a conductive region, selectively forming a self-aligned monolayer (SAM) on the dielectric region of the substrate to enhance nucleation process of a first precursor, and depositing the first precursor on the substrate, the precursor to adsorb on the SAM.
Public/Granted literature
- US3224243A Method of thickening the wall of a tube Public/Granted day:1965-12-21
Information query
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