Invention Grant
- Patent Title: Simplified pitch doubling process flow
- Patent Title (中): 简化俯仰加倍流程
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Application No.: US11400603Application Date: 2006-04-07
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Publication No.: US07902074B2Publication Date: 2011-03-08
- Inventor: Ardavan Niroomand , Baosuo Zhou , Ramakanth Alapati
- Applicant: Ardavan Niroomand , Baosuo Zhou , Ramakanth Alapati
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: H01L21/311
- IPC: H01L21/311
Abstract:
A method for fabricating a semiconductor device comprises patterning a layer of photoresist material to form a plurality of mandrels in a device array region. The method further comprises depositing an oxide material over the plurality of mandrels and over a device peripheral region. The method further comprises forming a pattern of photoresist material over the oxide material in the device peripheral region. The method further comprises anisotropically etching the oxide material from exposed horizontal surfaces in the device array region. The method further comprises selectively etching photoresist material from the device array region and from the device peripheral region.
Public/Granted literature
- US20070238308A1 Simplified pitch doubling process flow Public/Granted day:2007-10-11
Information query
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