Invention Grant
- Patent Title: Semiconductor trench structure having a sealing plug and method
- Patent Title (中): 具有密封塞和方法的半导体沟槽结构
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Application No.: US12206541Application Date: 2008-09-08
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Publication No.: US07902075B2Publication Date: 2011-03-08
- Inventor: Gordon M. Grivna , Gary H. Loechelt , John Michael Parsey, Jr. , Mohammed Tanvir Quddus
- Applicant: Gordon M. Grivna , Gary H. Loechelt , John Michael Parsey, Jr. , Mohammed Tanvir Quddus
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, L.L.C.
- Current Assignee: Semiconductor Components Industries, L.L.C.
- Current Assignee Address: US AZ Phoenix
- Agent Kevin B. Jackson
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
In one embodiment, a semiconductor device is formed having a trench structure. The trench structure includes a single crystalline semiconductor plug formed along exposed upper surfaces of the trench. In one embodiment, the single crystalline semiconductor plug seals the trench to form a sealed core.
Public/Granted literature
- US20100059815A1 SEMICONDUCTOR TRENCH STRUCTURE HAVING A SEALING PLUG AND METHOD Public/Granted day:2010-03-11
Information query
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