Invention Grant
- Patent Title: Method of fabricating semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12477688Application Date: 2009-06-03
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Publication No.: US07902076B2Publication Date: 2011-03-08
- Inventor: Tsubasa Imamura
- Applicant: Tsubasa Imamura
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2008-175743 20080704
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461
Abstract:
A method of fabricating a semiconductor device according to one embodiment includes: forming a porous film above a semiconductor substrate; forming an altered layer by applying alteration treatment to a first pattern region of the porous film up to a predetermined depth; forming a first concave portion by etching a second pattern region to a depth deeper than the predetermined depth, the second pattern region at least partially overlapping the first pattern region of the porous film having the altered layer formed therein; and forming a second concave portion by selectively removing the altered layer from the porous film after forming the first concave portion.
Public/Granted literature
- US20100003818A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2010-01-07
Information query
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