Invention Grant
- Patent Title: Semiconductor neutron detector
- Patent Title (中): 半导体中子探测器
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Application No.: US12141160Application Date: 2008-06-18
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Publication No.: US07902517B1Publication Date: 2011-03-08
- Inventor: Kiril D. Ianakiev , Peter B. Littlewood , Krastan B. Blagoev , Martyn T. Swinhoe , James L. Smith , Clair J. Sullivan , Boian S. Alexandrov , Jason Charles Lashley
- Applicant: Kiril D. Ianakiev , Peter B. Littlewood , Krastan B. Blagoev , Martyn T. Swinhoe , James L. Smith , Clair J. Sullivan , Boian S. Alexandrov , Jason Charles Lashley
- Applicant Address: US DC Washington
- Assignee: The United States of America as represented by the United States Department of Energy
- Current Assignee: The United States of America as represented by the United States Department of Energy
- Current Assignee Address: US DC Washington
- Agent Thomas S. O'Dwyer; James C. Durkis; John T. Lucas
- Main IPC: G01T3/00
- IPC: G01T3/00

Abstract:
A neutron detector has a compound of lithium in a single crystal form as a neutron sensor element. The lithium compound, containing improved charge transport properties, is either lithium niobate or lithium tantalate. The sensor element is in direct contact with a monitor that detects an electric current. A signal proportional to the electric current is produced and is calibrated to indicate the neutrons sensed. The neutron detector is particularly useful for detecting neutrons in a radiation environment. Such radiation environment may, e.g. include gamma radiation and noise.
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