Invention Grant
US07902528B2 Method and system for proximity effect and dose correction for a particle beam writing device
有权
用于粒子束写入装置的邻近效应和剂量校正的方法和系统
- Patent Title: Method and system for proximity effect and dose correction for a particle beam writing device
- Patent Title (中): 用于粒子束写入装置的邻近效应和剂量校正的方法和系统
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Application No.: US11603527Application Date: 2006-11-21
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Publication No.: US07902528B2Publication Date: 2011-03-08
- Inventor: Daisuke Hara , Katsuo Komuro , Takashi Mitsuhashi
- Applicant: Daisuke Hara , Katsuo Komuro , Takashi Mitsuhashi
- Applicant Address: US CA San Jose
- Assignee: Cadence Design Systems, Inc.
- Current Assignee: Cadence Design Systems, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Vista IP Law Group LLP
- Main IPC: G03F7/20
- IPC: G03F7/20
Abstract:
A method of particle beam lithography includes selecting at least two cell patterns from a stencil, correcting proximity effect by dose control and by pattern modification for the at least two cell patterns, and writing the at least cell two patterns by one shot of the particle beam after proximity effect correction (PEC).
Public/Granted literature
- US20080116398A1 Method and system for proximity effect and dose correction for a particle beam writing device Public/Granted day:2008-05-22
Information query
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