Invention Grant
US07902538B2 Phase change memory cell with first and second transition temperature portions
有权
具有第一和第二转变温度部分的相变存储器单元
- Patent Title: Phase change memory cell with first and second transition temperature portions
- Patent Title (中): 具有第一和第二转变温度部分的相变存储器单元
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Application No.: US12266200Application Date: 2008-11-06
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Publication No.: US07902538B2Publication Date: 2011-03-08
- Inventor: Hsiang Lan Lung
- Applicant: Hsiang Lan Lung
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Agent James F. Hann
- Main IPC: H01L47/00
- IPC: H01L47/00

Abstract:
A phase change memory cell includes first and second electrodes having generally coplanar surfaces spaced apart by a gap and a phase change bridge electrically coupling the first and second electrodes. The phase change bridge may extend over the generally coplanar surfaces and across the gap. The phase change bridge has a higher transition temperature bridge portion and a lower transition temperature portion. The lower transition temperature portion comprises a phase change region which can be transitioned from generally crystalline to generally amorphous states at a lower temperature than the higher transition temperature portion. A method for making a phase change memory cell is also disclosed.
Public/Granted literature
- US20090057641A1 Phase Change Memory Cell With First and Second Transition Temperature Portions Public/Granted day:2009-03-05
Information query
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