Invention Grant
US07902546B2 Rare earth-oxides, rare earth -nitrides, rare earth -phosphides and ternary alloys with silicon 有权
稀土氧化物,稀土 - 氮化物,稀土 - 磷化物和三元合金与硅

Rare earth-oxides, rare earth -nitrides, rare earth -phosphides and ternary alloys with silicon
Abstract:
Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or germanium to form compound semiconductors of the formula RE-(O, N, P)—(Si,Ge) are also disclosed, where RE=at least one selection from group of rare-earth metals, O=oxygen, N=nitrogen, P=phosphorus, Si=silicon and Ge=germanium. The presented ALE growth technique and material system can be applied to silicon electronics, opto-electronic, magneto-electronics and magneto-optics devices.
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