Invention Grant
US07902546B2 Rare earth-oxides, rare earth -nitrides, rare earth -phosphides and ternary alloys with silicon
有权
稀土氧化物,稀土 - 氮化物,稀土 - 磷化物和三元合金与硅
- Patent Title: Rare earth-oxides, rare earth -nitrides, rare earth -phosphides and ternary alloys with silicon
- Patent Title (中): 稀土氧化物,稀土 - 氮化物,稀土 - 磷化物和三元合金与硅
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Application No.: US11025693Application Date: 2004-12-28
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Publication No.: US07902546B2Publication Date: 2011-03-08
- Inventor: Petar B. Atanackovic
- Applicant: Petar B. Atanackovic
- Applicant Address: US CA Palo Alto
- Assignee: Translucent, Inc.
- Current Assignee: Translucent, Inc.
- Current Assignee Address: US CA Palo Alto
- Agency: Fernandez & Associates, LLP
- Main IPC: H01L31/0264
- IPC: H01L31/0264

Abstract:
Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or germanium to form compound semiconductors of the formula RE-(O, N, P)—(Si,Ge) are also disclosed, where RE=at least one selection from group of rare-earth metals, O=oxygen, N=nitrogen, P=phosphorus, Si=silicon and Ge=germanium. The presented ALE growth technique and material system can be applied to silicon electronics, opto-electronic, magneto-electronics and magneto-optics devices.
Public/Granted literature
- US20050163692A1 Rare earth-oxides, rare earth -nitrides, rare earth -phosphides and ternary alloys with silicon Public/Granted day:2005-07-28
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