Invention Grant
- Patent Title: Semiconductor light emitting device and a method of manufacturing the same
- Patent Title (中): 半导体发光器件及其制造方法
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Application No.: US12324400Application Date: 2008-11-26
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Publication No.: US07902557B2Publication Date: 2011-03-08
- Inventor: Jo Young Lee
- Applicant: Jo Young Lee
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2007-0123830 20071130
- Main IPC: H01L27/15
- IPC: H01L27/15

Abstract:
Disclosed is a semiconductor light emitting device comprising a seed layer, a first conductive semiconductor layer into which the seed layer is partially inserted, a first electrode electrically connected to the first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, and a second electrode layer under the second conductive semiconductor layer.
Public/Granted literature
- US20090140281A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND A METHOD OF MANUFACTURING THE SAME Public/Granted day:2009-06-04
Information query
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