Invention Grant
- Patent Title: Assemblies comprising magnetic elements and magnetic barrier or shielding
- Patent Title (中): 组件包括磁性元件和磁屏障或屏蔽
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Application No.: US12561994Application Date: 2009-09-17
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Publication No.: US07902580B2Publication Date: 2011-03-08
- Inventor: Joel A. Drewes
- Applicant: Joel A. Drewes
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L29/82
- IPC: H01L29/82
Abstract:
The invention includes a method of forming a semiconductor construction, such as an MRAM construction. A block is formed over a semiconductor substrate. First and second layers are formed over the block, and over a region of the substrate proximate the block. The first and second layers are removed from over the block while leaving portions of the first and second layers over the region proximate the block. At least some of the first layer is removed from under the second layer to form a channel over the region proximate the block. A material, such as a soft magnetic material, is provided within the channel. The invention also includes semiconductor constructions.
Public/Granted literature
- US20100019298A1 Assemblies Comprising Magnetic Elements And Magnetic Barrier Or Shielding Public/Granted day:2010-01-28
Information query
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