A semiconductor component includes an insulating region provided on the substrate, plural first conductivity type wire-form semiconductor layers aligned on the insulating region parallel to each other, second conductivity type source/drain regions provided to the respective semiconductor layers, a channel region provided between the source/drain regions, an insulating film provided on the upper and side surfaces of the channel region, and a gate electrode provided on the insulating film to continuously cross the semiconductor layers. The channel region length measured perpendicularly to a current flowing direction and in parallel to the substrate is not more than twofold a maximum depletion layer width determined based on an impurity concentration in the channel region, each interval between the semiconductor layers is not more than twofold an interval between the semiconductor layer and the gate electrode, and a dielectric constant of a part of the insulating region surface is lower than 3.9.