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US07902602B2 Organic thin film transistor with stacked organic and inorganic layers 有权
有机薄膜晶体管,堆叠有机和无机层

Organic thin film transistor with stacked organic and inorganic layers
Abstract:
The present invention provides an organic thin film transistor and method for fabricating the same. The organic thin film transistor has a substrate and a gate electrode that is positioned on the substrate. A gate insulator has a stacked structure comprising an inorganic gate insulator and an organic gate insulator that are positioned on the gate electrode. An organic semiconductor layer is positioned on the gate insulator to overlap the gate electrode. Accordingly, an organic thin film transistor that has flexibility, decreased leakage current, and a low threshold is formed.
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