Invention Grant
- Patent Title: Pumping MOS capacitor
- Patent Title (中): 泵送MOS电容
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Application No.: US12327559Application Date: 2008-12-03
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Publication No.: US07902632B2Publication Date: 2011-03-08
- Inventor: Jun-Ki Choi
- Applicant: Jun-Ki Choi
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2008-0063170 20080630
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
A pumping MOS capacitor includes a substrate which is conductive and includes an irregular surface, a dielectric film formed along the irregular surface of the substrate and a gate formed on the dielectric film.
Public/Granted literature
- US20090321802A1 PUMPING MOS CAPACITOR Public/Granted day:2009-12-31
Information query
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