Invention Grant
US07902633B2 Longitudinal bipolar transistor with base region in trenches having emitter and collector regions disposed along portions of side surfaces of the base
有权
纵向双极晶体管，其沟槽中具有基极区域，其中发射极和集电极区域沿基底的侧表面的部分设置
- Patent Title: Longitudinal bipolar transistor with base region in trenches having emitter and collector regions disposed along portions of side surfaces of the base
- Patent Title (中): 纵向双极晶体管，其沟槽中具有基极区域，其中发射极和集电极区域沿基底的侧表面的部分设置
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Application No.: US11805098Application Date: 2007-05-21
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Publication No.: US07902633B2Publication Date: 2011-03-08
- Inventor: Kazuhiro Tsumura
- Applicant: Kazuhiro Tsumura
- Applicant Address: JP
- Assignee: Seiko Instruments Inc.
- Current Assignee: Seiko Instruments Inc.
- Current Assignee Address: JP
- Agency: Adams & Wilks
- Priority: JP2006-148449 20060529
- Main IPC: H01L29/73
- IPC: H01L29/73
Abstract:
Provided is a semiconductor device including: a silicon substrate; at least two trenches spaced apart from each other, being in parallel with each other, and being formed by vertically etching the silicon substrate from a surface thereof; an electrically insulating film for burying therein at least bottom surfaces of the trenches; a base region formed in a region of the silicon substrate located between the two trenches; and an emitter region and a collector region formed on portions of side surfaces of the trenches, respectively, the portions of the sides located above the insulating film and formed in the base region.
Public/Granted literature
- US20070272964A1 Semiconductor device and method of manufacturing the same Public/Granted day:2007-11-29
Information query
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