Invention Grant
- Patent Title: High-power-gain, bipolar transistor amplifier
- Patent Title (中): 大功率增益双极晶体管放大器
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Application No.: US11178644Application Date: 2005-07-11
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Publication No.: US07902635B2Publication Date: 2011-03-08
- Inventor: Zhenqiang Ma , Ningyue Jiang
- Applicant: Zhenqiang Ma , Ningyue Jiang
- Applicant Address: US WI Madison
- Assignee: Wisconsin Alumni Research Foundation
- Current Assignee: Wisconsin Alumni Research Foundation
- Current Assignee Address: US WI Madison
- Agency: Boyle Fredrickson, S.C.
- Main IPC: H01L27/082
- IPC: H01L27/082
Abstract:
Improved radio frequency gain in a silicon-based bipolar transistor may be provided by adoption of a common-base configuration, preferably together with excess doping of the base to provide extremely low base resistances boosting performance over similar common-emitter designs.
Public/Granted literature
- US20070007626A1 High-power-gain, bipolar transistor amplifier Public/Granted day:2007-01-11
Information query
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