Invention Grant
- Patent Title: Nano structure and method of manufacturing nano structure
- Patent Title (中): 纳米结构和制造纳米结构的方法
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Application No.: US12109701Application Date: 2008-04-25
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Publication No.: US07902637B2Publication Date: 2011-03-08
- Inventor: Taiko Motoi , Kenji Tamamori , Shinan Wang , Masahiko Okunuki , Haruhito Ono , Toshiaki Aiba , Nobuki Yoshimatsu
- Applicant: Taiko Motoi , Kenji Tamamori , Shinan Wang , Masahiko Okunuki , Haruhito Ono , Toshiaki Aiba , Nobuki Yoshimatsu
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2007-128789 20070515; JP2008-077106 20080325
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/302
Abstract:
A nano structure formed on the surface of a substrate containing Si and having a pattern of at least 2 μm in depth, in which Ga or In is contained in the surface of the pattern, and the Ga or the In has a concentration distribution that an elemental composition ratio Ga/Si or In/Si of Si and Ga or In detected by an X-ray photoelectron spectroscopy is at least 0.4 atomic percent in the depth direction of the substrate, and the maximum value of the concentration is positioned within 50 nm of the surface of the pattern.
Public/Granted literature
- US20090315153A1 NANO STRUCTURE AND MANUFACTURING METHOD OF NANO STRUCTURE Public/Granted day:2009-12-24
Information query
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