Invention Grant
- Patent Title: Semiconductor device and manufacturing method therefor
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12220625Application Date: 2008-07-24
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Publication No.: US07902641B2Publication Date: 2011-03-08
- Inventor: Yoshiyuki Kikuchi
- Applicant: Yoshiyuki Kikuchi
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Main IPC: H01L23/58
- IPC: H01L23/58
Abstract:
The present invention relates to a semiconductor device. The semiconductor device includes a fluorocarbon film formed on a substrate and a film containing metal formed on the fluorocarbon film, wherein the content amount of fluorine atom on the fluorocarbon film, which contacts the film containing metal, is in a predetermined range.
Public/Granted literature
- US20100019356A1 Semiconductor device and manufacturing method therefor Public/Granted day:2010-01-28
Information query
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