Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12255052Application Date: 2008-10-21
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Publication No.: US07902669B2Publication Date: 2011-03-08
- Inventor: Jong-Taek Hwang
- Applicant: Jong-Taek Hwang
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Vaughn, PLLC
- Priority: KR10-2007-0107651 20071025
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/48 ; H01L29/40
Abstract:
A semiconductor device includes a pattern layer formed on and/or over a semiconductor substrate, a fluorine-diffusion barrier layer containing a silicon-doped silicon oxide formed on and/or over the pattern layer, and an interlayer dielectric layer containing fluorine formed on and/or over the fluorine-diffusion barrier layer.
Public/Granted literature
- US20090108451A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2009-04-30
Information query
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