Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US10594844Application Date: 2005-01-12
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Publication No.: US07902678B2Publication Date: 2011-03-08
- Inventor: Akira Ohuchi , Tomoo Murakami
- Applicant: Akira Ohuchi , Tomoo Murakami
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2004-094309 20040329
- International Application: PCT/JP2005/000226 WO 20050112
- International Announcement: WO2005/093817 WO 20051006
- Main IPC: H01L23/498
- IPC: H01L23/498

Abstract:
Electrode pads (5) and a solder resist (7) are disposed on the upper surface of a wiring board (1), and apertures (7a) are formed in the solder resist (7) so as to expose the electrode pads (5). Electrodes (4) are disposed on the lower surface of a semiconductor element (2). Electrodes (4) are connected to the electrode pads (5) by way of bumps (3). An underfill resin (6) is disposed in the area that excludes the solder resist (7) and the bumps (3) in the space between the wiring board (1) and the semiconductor element (2). Between the wiring board (1) and the semiconductor element (2), the thickness (B) of the solder resist (7) is equal to or greater than the thickness (A) of the underfill resin (6) on the solder resist (7). The volume (Vb) of the bumps (3) is less than the volume (Vs) of the apertures (7a).
Public/Granted literature
- US20080251942A1 Semiconductor Device and Manufacturing Method Thereof Public/Granted day:2008-10-16
Information query
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