Invention Grant
US07902680B2 Layered structure, electron device, and an electron device array having a variable wettability layer and semiconductor layer formed thereon
有权
层状结构，电子器件和具有可变润湿性层和形成在其上的半导体层的电子器件阵列
- Patent Title: Layered structure, electron device, and an electron device array having a variable wettability layer and semiconductor layer formed thereon
- Patent Title (中): 层状结构，电子器件和具有可变润湿性层和形成在其上的半导体层的电子器件阵列
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Application No.: US12548208Application Date: 2009-08-26
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Publication No.: US07902680B2Publication Date: 2011-03-08
- Inventor: Takanori Tano , Koh Fujimura , Hidenori Tomono , Hitoshi Kondoh
- Applicant: Takanori Tano , Koh Fujimura , Hidenori Tomono , Hitoshi Kondoh
- Applicant Address: JP Tokyo
- Assignee: Ricoh Company, Ltd.
- Current Assignee: Ricoh Company, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2003-156314 20030602; JP2004-086388 20040324; JP2004-124292 20040420
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A layered structure comprises a variable wettability layer including a material that changes a critical surface tension in response to energy provided thereto, the wettability changing layer including at least a high surface energy part of large critical surface tension and a low surface energy part of low critical surface tension, a conductive layer formed on the variable wettability layer at the high surface energy tension part, and a semiconductor layer formed on the variable wettability layer at the low surface energy part.
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