Invention Grant
- Patent Title: Light emitting apparatus
- Patent Title (中): 发光装置
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Application No.: US11935831Application Date: 2007-11-06
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Publication No.: US07902740B2Publication Date: 2011-03-08
- Inventor: Masayuki Sakakura , Shunpei Yamazaki
- Applicant: Masayuki Sakakura , Shunpei Yamazaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2001-079586 20010319; JP2001-087092 20010326
- Main IPC: H01L51/52
- IPC: H01L51/52
Abstract:
A light-emitting apparatus of the present invention includes: a first electrode formed on an insulating surface; a first insulating layer covering an end portion of the first electrode and having a tapered edge; a second insulating layer formed on the first electrode and the first insulating layer and formed of one kind or a plurality of kinds selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; an organic compound layer formed on the second insulating layer; and a second electrode formed on the organic compound layer.
Public/Granted literature
- US20080079359A1 LIGHT EMITTING APPARATUS AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2008-04-03
Information query
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