Invention Grant
- Patent Title: Light-emitting device having a thin insulating film made of nitrogen and silicon and an electrode made of conductive transparent oxide and silicon dioxide
- Patent Title (中): 具有由氮和硅制成的薄绝缘膜和由导电透明氧化物和二氧化硅制成的电极的发光器件
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Application No.: US10967143Application Date: 2004-10-19
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Publication No.: US07902747B2Publication Date: 2011-03-08
- Inventor: Shunpei Yamazaki , Junichiro Sakata , Kaoru Tsuchiya
- Applicant: Shunpei Yamazaki , Junichiro Sakata , Kaoru Tsuchiya
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2003-361287 20031021
- Main IPC: H01J1/62
- IPC: H01J1/62

Abstract:
It is an object of the present invention is to provide a light-emitting device in which high luminance can be obtained with low power consumption by improving the extraction efficiency. A light-emitting device of the invention comprises an insulating film, a plurality of first electrodes being in contact with the insulating film and formed on the insulating film to be in parallel, an electroluminescent layer formed over the plurality of first electrodes, and a plurality of second electrodes intersecting with the plurality of first electrodes and formed over the electroluminescent layer in parallel, wherein the insulating film contains nitrogen and silicon and the first electrodes contain a conductive transparent oxide material and silicon oxide.
Public/Granted literature
- US20050082966A1 Light-emitting device Public/Granted day:2005-04-21
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