Invention Grant
US07902853B2 Semiconductor device, semiconductor device testing method, and probe card
有权
半导体器件，半导体器件测试方法和探针卡
- Patent Title: Semiconductor device, semiconductor device testing method, and probe card
- Patent Title (中): 半导体器件，半导体器件测试方法和探针卡
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Application No.: US11802335Application Date: 2007-05-22
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Publication No.: US07902853B2Publication Date: 2011-03-08
- Inventor: Ren Uchida , Masami Mori
- Applicant: Ren Uchida , Masami Mori
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2006-173133 20060622
- Main IPC: G01R31/26
- IPC: G01R31/26 ; G11C29/00
Abstract:
A test signal to be supplied to a driver section when the driver section is subjected to an operation test is generated by a test circuit. In the test circuit, the test signal can be generated by a burn-in control circuit in accordance with a clock signal TESTCK supplied from an outside source.
Public/Granted literature
- US20070296395A1 Semiconductor device, semiconductor device testing method, and probe card Public/Granted day:2007-12-27
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